HAT3010R Datasheet, PDF (8/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3010R
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
V_GS = -4.5 V
0.02
0.01
1
-10 V
3
10
30
100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
1, 2 A
0.06
ID=5A
0.04 ^V GS ^{= 4.5 V}
0.02
0
-40
1, 2, 5 A
10 V
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
10 _{Tc = -25°C}
5
25°C
75°C
2
1
V _DS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I _DR (A)
Rev.8, Aug. 2002, page 6 of 14