HAT3010R Datasheet, PDF (4/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3010R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch
Pch
Drain to source voltage
V
60
DSS
Gate to source voltage
V_GSS
±20
Drain current
I_D
6
Drain peak current
I Note1
D(pulse)
48
Body-drain diode reverse drain current I
6
DR
Channel dissipation
Pch ^Note2
2
Channel dissipation
Pch ^Note3
3
–60
V
±20
V
–5
A
–40
A
–5
A
2
W
3
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150 –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Rev.8, Aug. 2002, page 2 of 14