HAT3010R Datasheet, PDF (11/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3010R
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 ^{VGS = -4.5 V}
0.05
-10 V
0.02
0.01
-1
-3
-10
-30
-100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
–5 A
0.15
I D = -1, –2 A
V_GS = –4.5 V
0.10
–5 A
0.05
0
–40
–10 V
–1, –2 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = -25°C
5
2
25°C
75°C
1
0.5
-0.1 -0.3
V _DS = -10 V
Pulse Test
-1 -3 -10 -30 -100
Drain Current I _D (A)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
200
100
50
20
10
-0.1 -0.3 -1 -3 -10 -30 -100
Reverse Drain Current I _DR (A)
Rev.8, Aug. 2002, page 9 of 14