HAT3010R Datasheet, PDF (7/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

Main Charactristice
• N Channel
100
30
10
3
1
0.3
0.1
0.03
0.01
Maximum Safe Operation Area
10 _µs
100
Othpiseararet^Dioa^Cni^O_si^pn^{erationP(WPW=<1}1^10N₀^ommt_s^e₎^ss₅
µ_s
limited by R DS(on)
0.003
Ta = 25°C
1 shot Pulse
0.001
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
HAT3010R
Typical Output Characteristics
10
10 V
4V
3V
8
6
4
Pulse Test
2
2.5 V
0
2
4
6
Drain to Source Voltage
V_GS = 2 V
8
10
V _DS (V)
Typical Transfer Characteristics
10
V _DS = 10 V
Pulse Test
8
6
4
Tc = 75°C
25°C
2
−25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
300
Pulse Test
200
ID=5A
100
2A
1A
0
5
10
15
20
Gate to Source Voltage V _GS (V)
Rev.8, Aug. 2002, page 5 of 14