HAT3010R Datasheet, PDF (15/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

Package Dimensions
4.90
5.3 Max
8
5
1
4
0.75 Max
1.27
*0.42 ± 0.08
0.40 ± 0.06
*Dimension including the plating thickness
Base material dimension
HAT3010R
As of January, 2002
Unit: mm
6.10
+
–
0.10
0.30
1.08
0.60
+
–
0.67
0.20
0˚ – 8˚
0.15
0.25 M
Hitachi Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Rev.8, Aug. 2002, page 13 of 14