M16C5LD Datasheet, PDF (77/85 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5LD Group, M16C/56D Group
5. Electrical Characteristics
Table 5.29 Electrical Characteristics (2)
Topr = −40 to 85°C unless otherwise specified.
V_CC = 3 V
Symbol Parameter
Measuring Condition
Standard
Unit
Min. Typ. Max.
f_(BCLK) = 25MHz,
XIN = 8 MHz (square wave), PLL multiply-by-8
125-kHz on-chip oscillator operates
26 40 mA
High speed mode
f_(BCLK) = 20 MHz,
XIN = 20 MHz (square wave),
125-kHz on-chip oscillator operates
19 28 mA
f_(BCLK) = 16 MHz,
XIN = 16 MHz (square wave),
125-kHz on-chip oscillator operates
15
mA
Main clock stops
Power Supply
125-kHz on-chip oscillator
mode
125-kHz on-chip oscillator operates
Divide-by-8
FMR22 = FMR23 = 1 (Low-current
Current
consumption read mode)
(V_CC = 3.0 V to 3.6
V)
I_CC
In single-chip
Low power mode
mode, the output
pins are open and
other pins are
VSS
f_(BCLK) = 32 kHz
On Flash memory ⁽¹⁾
FMR22 = FMR23 = 1 (Low-current
consumption read mode)
Main clock stops
125-kHz on-chip oscillator operates
Peripheral clock operates
Wait mode
Topr = 25°C
Main clock stops
125-kHz on-chip oscillator operates
Peripheral clock operates
T_opr = 85°C
Stop mode
T_opr = 25°C
T_opr = 85°C
During flash memory
program
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 3.0 V
150 500 μA
160
μA
20
μA
50
μA
17 27 μA
45
μA
20.0
mA
During flash memory
erase
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 3.0 V
30.0
mA
I_det2
Low Voltage Detection Dissipation Current
3
μA
I_det0
Reset Area Detection Dissipation Current
6
μA
Note:
1. This indicates the memory in which the program to be executed exists.
REJ03B0307-0110 Rev.1.10 Dec 01, 2009
Page 77 of 83