M16C5LD Datasheet, PDF (69/85 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5LD Group, M16C/56D Group
5. Electrical Characteristics
Table 5.14 Electrical Characteristics (2)
T_opr = −40 to 85°C unless otherwise specified.
V_CC = 5 V
Symbol Parameter
Measuring Condition
Standard
Unit
Min. Typ. Max.
f_(BCLK) = 32MHz,
XIN = 8 MHz (square wave), PLL multiply-by-8
125-kHz on-chip oscillator operates
High speed mode
f_(BCLK) = 20 MHz,
XIN = 20 MHz (square wave),
125-KHz on-chip oscillator operates
f_(BCLK) = 16 MHz,
XIN = 16 MHz (square wave),
125-KHz on-chip oscillator operates
Power Supply
Main clock stops
I_CC
Current
(V_CC =4.2V to 5.5
V)
In single-chip
125-kHz on-chip oscillator
mode
125-kHz on-chip oscillator operates
Divide-by-8
FMR22 = FMR23 = 1 (Low-current
consumption read mode)
mode, the output
f_(BCLK) = 32 kHz
pins are open and _{Low power mode}
other pins are
On Flash memory ⁽¹⁾
FMR22 = FMR23 = 1 (Low-current
V_SS
consumption read mode)
Main clock stops
125-kHz on-chip oscillator operates
Peripheral clock operates
Wait mode
T_opr = 25°C
Main clock stops
125-kHz on-chip oscillator operates
Peripheral clock operates
T_opr = 85°C
Stop mode
T_opr = 25°C
T_opr = 85°C
During flash memory
program
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 5.0 V
During flash memory
erase
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 5.0 V
I_det2
Low Voltage Detection Dissipation Current
I_det0
Reset Area Detection Dissipation Current
28 42 mA
20 30 mA
16
mA
150 500 μA
160
μA
20
μA
50
μA
18 30 μA
45
μA
20.0
mA
30.0
mA
3
μA
6
μA
Note:
1. This indicates the memory in which the program to be executed exists.
REJ03B0307-0110 Rev.1.10 Dec 01, 2009
Page 69 of 83