HYB18L256169BF Datasheet, PDF (44/48 Pages) Qimonda AG – 256-Mbit Mobile-RAM

HY[B/E]18L256169BF-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
Table 22 Self Refresh Currents¹⁾²⁾
Parameter & Test Conditions
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
Max.
Symbol
Temperature
85 °C
I_DD6
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
Values
typ.
max.
510
600
340
–
225
–
205
–
400
470
285
–
200
–
180
–
340
400
250
–
185
–
170
–
Units
µA
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (extended); V_DD = V_DDQ = 1.70V to 1.95V
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
temperature with a much finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for
TCSR. At production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained
from device characterization.
Data Sheet
44
Rev. 1.02, 2006-12
02032006-MP0M-7FQG