HYB18L256169BF Datasheet, PDF (40/48 Pages) Qimonda AG – 256-Mbit Mobile-RAM

HY[B/E]18L256169BF-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Table 17 Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
min.
max.
Power Supply Voltage
V_DD
-0.3
2.7
V
Power Supply Voltage for Output Buffer
V_DDQ
-0.3
2.7
V
Input Voltage
V_IN
-0.3
V_DDQ + 0.3
V
Output Voltage
V_OUT
-0.3
V_DDQ + 0.3
V
Operation Case Temperature
Commercial
T_C
0
+ 70
°C
Extended
-25
+85
°C
Storage Temperature
Power Dissipation
Short Circuit Output Current
T_STG
-55
+150
°C
P_D
–
0.7
W
I_OUT
–
50
mA
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 18 Pin Capacitances¹⁾²⁾
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance: CLK
C_I1
1.5
3.0
pF
Input capacitance: all other input pins
C_I2
1.5
3.0
pF
Input/Output capacitance: DQ
C_IO
3.0
5.0
pF
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test)
floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level.
Data Sheet
40
Rev. 1.02, 2006-12
02032006-MP0M-7FQG