BUK112-50GL Datasheet, PDF (6/16 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
SWITCHING CHARACTERISTICS
T_mb = 25 ˚C
SYMBOL PARAMETER
Resistive load
t_{d on}
Turn-on delay time
t_r
Rise time
t_{d off}
Turn-off delay time
t_f
Fall time
Inductive load
t_{d on}
Turn-on delay time
t_r
Rise time
t_{d off}
Turn-off delay time
t_f
Fall time
CONDITIONS
R_L = 4 Ω; I_D = 3 A
V_IS: 0 V ⇒ 5 V
V_IS: 5 V ⇒ 0 V
I_D = 3 A; V_DD = 13 V;
with freewheel diode
V_IS: 0 V ⇒ 5 V
V_IS: 5 V ⇒ 0 V
Product specification
BUK112-50GL
MIN. TYP. MAX. UNIT
-
0.6
-
µs
-
2.8
-
µs
-
3.5
-
µs
-
3.2
-
µs
-
0.9
-
µs
-
1.2
-
µs
-
6.7
-
µs
-
0.6
-
µs
September 1996
6
Rev 1.000