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BUK112-50GL Datasheet, PDF (3/16 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK112-50GL
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Thermal resistance
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN. TYP. MAX. UNIT
-
- 2.38 K/W
-
60
- K/W
OUTPUT CHARACTERISTICS
Tmb = 25 ˚C; VPS = 0 V unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Off-state
V(CL)DSS
IDSS
Drain-source clamping voltage
Drain-source leakage current1
On-state
ID = 10 mA; -40˚C ≤ Tmb ≤ 150˚C
IDM = 0.75 A; tp ≤ 300 µs; δ ≤ 0.01
VIS = 0 V;
VDS = 13 V
VDS = 50 V
Tmb = 125 ˚C; VDS = 40 V
tp ≤ 300 µs; δ ≤ 0.01
RDS(ON)
Drain-source on-resistance
IDM = 6 A; VIS = 4.4 V; VPS = 4.5 V
Tmb = 150 ˚C
MIN. TYP. MAX. UNIT
50
-
70
V
50 60 70
V
-
0.5 10 µA
-
1
20 µA
-
10 100 µA
-
70 93 mΩ
-
135 165 mΩ
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Normal operation
VIS(TO)
Input threshold voltage
IIS
V(CL)IS
RIG
IISL
Input current
Input clamping voltage
Internal series resistance
Overload protection latched
Input current
CONDITIONS
VDS = 13 V; VPS = 0 V; ID = 1 mA
-40˚C ≤ Tmb ≤ 150˚C
VIS = 5 V
-40˚C ≤ Tmb ≤ 150˚C
II = 1.5 mA
to gate of power MOSFET
VPS = 5 V; VIS = 5 V
MIN. TYP. MAX. UNIT
1
1.5
2
V
0.5
-
2.5 V
200 350 500 µA
6
7.1
-
V
-
1.5
-
kΩ
1.5 3.2 4 mA
REVERSE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
-VDS
Reverse drain voltage2
-VIS
Reverse input voltage
-VPS
Reverse protection pin voltage
-VFS
Reverse flag voltage
CONDITIONS
-ID = 6 A
-II = 5 mA
-IP = 5 mA
-IF = 5 mA
MIN.
-
-
-
-
TYP.
0.8
0.7
0.7
0.7
MAX.
-
-
-
-
UNIT
V
V
V
V
1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2 Protection functions are disabled during reverse conduction.
September 1996
3
Rev 1.000
 ▷