BUK112-50GL Datasheet, PDF (2/16 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK112-50GL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
Continuous voltage
V_DS
Drain source voltage¹
Continuous currents
V_IS = 0 V
I_D
Drain current
V_PS = 5 V; T_mb = 25 ˚C
MIN.
-
-
I_I
Input current
I_F
Flag current
I_P
Protection supply current
Thermal
P_tot
Total power dissipation
T_stg
T_j
Storage temperature
Junction temperature²
T_sold
Lead temperature
V_PS = 0 V; T_mb = 94 ˚C
-
-
-5
-
-5
-
-5
T_mb = 25 ˚C
-
-
-55
continuous
-
during soldering
-
MAX.
50
self -
limited
12
5
5
5
52
175
150
260
UNIT
V
A
A
mA
mA
mA
W
˚C
˚C
˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
Electrostatic discharge capacitor
voltages
V_C1
Drain to source
V_C2
Input, flag or protection to source
CONDITIONS
Human body model;
C = 100 pF; R = 1.5 kΩ
MIN. MAX. UNIT
-
4.5
kV
-
2
kV
OVERLOAD PROTECTION LIMITING VALUE
With the protection supply
connected, TOPFET can protect
itself from two types of overload -
short circuit load and
overtemperature.
For overload conditions an n-MOS
transistor turns on between the
gate and source to quickly
discharge the power MOSFET
gate capacitance.
SYMBOL PARAMETER
CONDITIONS
V_PSP
Protection supply voltage³
for valid protection
The drain current is limited to
reduce dissipation in case of short
circuit load. Refer to OVERLOAD
CHARACTERISTICS.
MIN.
4.5
MAX.
-
UNIT
V
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
E_DSM
E_DRM
Non-repetitive clamping energy
Repetitive clamping energy
I_DM = 6 A; T_mb = 25˚C
I_DM = 3.1 A; V_DD ≤ 20 V;
T_mb ≤ 120˚C; f = 250 Hz
-
200
mJ
-
20
mJ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates to protect the switch.
3 The minimum supply voltage required for correct operation of the overload protection circuits.
September 1996
2
Rev 1.000