BUK112-50GL Datasheet, PDF (5/16 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK112-50GL
OVERLOAD CHARACTERISTICS
T_mb = 25 ˚C; V_PS = 5 V unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_D
P_D(TO)
E_DSC
I_DM
T_j(TO)
Short circuit load protection
Drain current limiting
Overload power threshold¹
Characteristic energy
Peak drain current³
Overtemperature protection
Threshold temperature
V_IS = 5 V
V_DS = 13 V -40˚C ≤ T_mb ≤ 150˚C
for protection to operate
which determines trip time²
V_DD = 13 V; R_L ≤ 10 mΩ
I_D ≥ 1 A
FLAG CHARACTERISTICS
The flag is an open drain transistor which requires an external pull-up circuit.
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Flag ‘low’
V_FSF
Flag voltage
I_FSF
Flag saturation current
Flag ‘high’
normal operation; V_PS = 5 V
I_F = 100 µA
-40˚C ≤ T_mb ≤ 150˚C
V_FS = 5 V
overload or fault
I_FSO
V_(CL)FS
Flag leakage current
Flag clamping voltage
V_FS = 5 V
I_F = 100 µA
T_mb = 150˚C
V_PSF
Protection supply threshold
I_F = 100 µA; V_DS = 5 V
voltage⁴
-40˚C ≤ T_mb ≤ 150˚C
Application information
R_F
Suitable external pull-up
V_FF = 5 V
resistance
MIN. TYP. MAX. UNIT
12 24 36
A
- 100 -
W
-
200
-
mJ
-
45
-
A
150 185 215 ˚C
MIN. TYP. MAX. UNIT
-
0.7
-
V
-
-
0.9 V
-
10
-
mA
-
0.1
1
µA
-
1
10 µA
6
6.9
-
V
2.5 3
4
V
2
-
4
V
-
50
-
kΩ
1 Refer to figure 15.
2 Trip time t_{d sc} ≈ E_DSC / [ P_D - P_D(TO) ]. Refer also to figure 15.
3 For short circuit load connected after turn-on.
4 When V_PS is less than V_PSF the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.
September 1996
5
Rev 1.000