BFT93W Datasheet, PDF (5/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
30
gain
(dB)
20
10
MLB428
MSG
G _UM
0
0
10
20
30
40
IC (mA)
V_CE = −5 V; f = 500 MHz.
Fig.6 Gain as a function of collector current,
typical values.
30
gain
(dB)
20
10
MLB429
MSG
G _UM
0
0
10
20
30
40
IC (mA)
V_CE = −5 V; f = 1 GHz.
Fig.7 Gain as a function of collector current,
typical values.
50
gain
(dB)
40
30
G _UM
MSG
20
10
0
10
10²
MLB430
G _max
10³
10⁴
f (MHz)
V_CE = −5 V; I_C = −10 mA.
Fig.8 Gain as a function of frequency,
typical values.
March 1994
50
gain
(dB)
40
30
G _UM
MSG
20
10
0
10
10²
MLB431
G _max
10³
10⁴
f (MHz)
V_CE = −5 V; I_C = −30 mA.
Fig.9 Gain as a function of frequency,
typical values.
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