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BFT93W Datasheet, PDF (11/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor | |||
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Philips Semiconductors
PNP 4 GHz wideband transistor
Product speciï¬cation
BFT93W
Table 1 Common emitter scattering parameters: VCE = â5 V; IC = â5 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.759
0.711
0.630
0.586
0.566
0.557
0.551
0.546
0.543
0.541
0.541
0.549
0.559
0.565
0.566
0.575
0.594
0.613
0.623
0.618
0.621
â20.5
â49.0
â88.0
â113.6
â130.5
â141.8
â150.5
â157.1
â162.7
â167.6
â172.0
â179.4
174.8
170.3
165.6
160.5
156.3
153.7
151.4
148.2
144.5
11.294
10.079
8.082
6.355
5.116
4.266
3.653
3.193
2.838
2.551
2.323
1.975
1.737
1.555
1.420
1.310
1.217
1.135
1.064
1.019
0.975
165.0
147.7
126.7
113.1
104.1
97.5
92.2
87.7
83.9
80.4
77.4
71.7
66.4
61.7
57.7
54.2
51.1
47.7
44.8
41.7
39.3
0.023
0.050
0.076
0.090
0.099
0.107
0.113
0.120
0.127
0.133
0.140
0.153
0.168
0.183
0.197
0.213
0.228
0.242
0.255
0.271
0.289
78.5
64.5
51.2
45.1
42.9
42.8
43.7
44.9
46.2
47.6
49.1
51.6
53.8
55.2
56.8
58.3
59.7
60.6
60.9
61.5
61.9
0.945
0.834
0.631
0.491
0.403
0.349
0.316
0.293
0.277
0.263
0.249
0.223
0.212
0.215
0.220
0.215
0.208
0.217
0.242
0.264
0.275
â12.3
â27.8
â44.0
â52.8
â58.5
â62.5
â65.2
â66.8
â67.7
â68.1
â68.7
â71.8
â78.3
â84.5
â87.5
â91.0
â98.1
â107.7
â114.1
â116.9
â119.3
GUM
(dB)
34.5
28.3
22.5
19.1
16.6
14.8
13.3
12.0
10.9
9.9
9.1
7.7
6.6
5.7
4.9
4.3
3.8
3.4
2.9
2.6
2.2
Table 2 Noise data: VCE = â5 V; IC = â5 mA.
f
(MHz)
Fmin
(dB)
500
1.80
1 000
2.55
Îopt
(ratio)
(deg)
0.307
86.5
0.358
121.0
Rn
0.320
0.280
March 1994
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