BFT93W Datasheet, PDF (12/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 3 Common emitter scattering parameters: V_CE = −5 V; I_C = −10 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.608
0.571
0.538
0.531
0.531
0.532
0.534
0.533
0.532
0.534
0.535
0.545
0.557
0.561
0.563
0.574
0.593
0.612
0.620
0.616
0.618
−31.5
−72.1
−114.5
−136.1
−149.0
−157.3
−163.6
−168.6
−172.9
−176.8
179.7
173.7
169.2
165.5
161.2
156.6
153.0
150.6
148.8
146.0
142.3
18.195
15.044
10.475
7.676
5.989
4.907
4.161
3.613
3.195
2.866
2.603
2.206
1.931
1.724
1.570
1.447
1.343
1.251
1.171
1.122
1.074
160.2
138.8
117.4
106.0
98.6
93.2
88.9
85.1
81.8
78.8
76.2
71.2
66.6
62.2
58.5
55.2
52.4
49.2
46.3
43.2
40.7
0.020
0.041
0.059
0.070
0.079
0.088
0.097
0.106
0.116
0.125
0.135
0.153
0.172
0.191
0.208
0.227
0.244
0.260
0.274
0.290
0.309
75.6
60.6
51.1
49.3
50.2
51.8
53.8
55.4
56.9
58.1
59.3
61.0
62.0
62.3
62.7
63.2
63.7
64.0
63.5
63.3
63.2
0.900
0.725
0.490
0.360
0.287
0.245
0.221
0.204
0.192
0.179
0.167
0.145
0.140
0.149
0.154
0.150
0.148
0.165
0.192
0.213
0.223
−18.0
−38.4
−56.6
−66.3
−73.0
−77.9
−81.4
−83.2
−84.2
−84.5
−85.3
−90.1
−98.7
−104.6
−106.3
−109.4
−117.9
−127.5
−131.8
−132.1
−133.3
G_UM
(dB)
34.4
28.5
23.1
19.7
17.4
15.5
14.1
12.8
11.7
10.7
9.9
8.5
7.4
6.5
5.7
5.0
4.5
4.1
3.6
3.3
2.9
Table 4 Noise data: V_CE = −5 V; I_C = −10 mA.
f
(MHz)
F_min
(dB)
500
2.40
1 000
2.90
Γ_opt
(ratio)
(deg)
0.304
94.7
0.321
136.9
R_n
0.430
0.270
March 1994
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