BFT93W Datasheet, PDF (16/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 11 Common emitter scattering parameters: V_CE = −10 V; I_C = −10 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.744
0.666
0.556
0.507
0.485
0.474
0.469
0.465
0.461
0.459
0.460
0.469
0.482
0.488
0.489
0.501
0.522
0.543
0.557
0.556
0.560
−24.2
−56.4
−95.4
−119.1
−134.4
−144.5
−152.4
−158.4
−163.5
−168.1
−172.3
−179.3
175.4
171.5
167.2
162.2
158.0
155.4
153.8
151.0
147.6
18.034
15.339
11.171
8.353
6.576
5.412
4.597
3.997
3.537
3.170
2.875
2.435
2.130
1.898
1.723
1.584
1.469
1.367
1.278
1.222
1.168
162.0
142.3
121.0
109.0
101.2
95.6
91.1
87.2
83.9
80.8
78.2
73.1
68.4
64.1
60.4
57.0
54.0
50.7
47.8
44.7
42.1
0.019
0.040
0.059
0.071
0.081
0.090
0.099
0.108
0.118
0.128
0.137
0.155
0.173
0.191
0.207
0.224
0.239
0.253
0.264
0.278
0.295
77.2
63.6
53.5
50.8
51.0
52.2
53.7
54.9
56.1
57.0
57.8
59.1
59.8
59.7
59.9
60.3
60.6
60.7
60.3
60.4
60.4
0.902
0.757
0.533
0.398
0.319
0.272
0.243
0.224
0.209
0.196
0.183
0.157
0.144
0.147
0.150
0.144
0.134
0.140
0.162
0.183
0.192
−15.2
−33.0
−49.6
−57.9
−63.2
−66.9
−69.2
−70.3
−70.3
−69.7
−69.3
−71.0
−77.4
−83.7
−85.2
−87.1
−94.3
−106.3
−113.7
−115.3
−116.6
G_UM
(dB)
35.9
30.0
24.0
20.5
18.0
16.1
14.6
13.3
12.2
11.2
10.4
8.9
7.8
6.8
6.0
5.3
4.8
4.3
3.9
3.5
3.1
Table 12 Noise data: V_CE = −10 V; I_C = −10 mA.
f
(MHz)
F_min
(dB)
500
2.40
1 000
2.90
Γ_opt
(ratio)
(deg)
0.270
83.0
0.350
115.0
R_n
0.400
0.350
March 1994
16