BFT93W Datasheet, PDF (17/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 13 Common emitter scattering parameters: V_CE = −10 V; I_C = −20 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.655
0.568
0.487
0.463
0.456
0.453
0.453
0.451
0.451
0.452
0.454
0.467
0.482
0.490
0.493
0.505
0.528
0.550
0.563
0.562
0.565
−33.6
−73.8
−113.4
−134.1
−146.7
−154.7
−161.0
−165.7
−169.9
−173.7
−177.3
176.6
172.4
168.8
164.8
159.8
155.9
153.6
151.9
149.2
145.8
25.207
19.459
12.634
9.050
6.997
5.702
4.818
4.171
3.683
3.297
2.986
2.521
2.200
1.956
1.774
1.630
1.509
1.405
1.312
1.253
1.199
156.9
133.9
113.7
103.5
96.9
92.1
88.2
84.8
81.8
79.0
76.6
71.9
67.6
63.6
60.1
56.8
54.1
51.0
48.1
45.2
42.6
0.018
0.035
0.050
0.061
0.072
0.082
0.093
0.104
0.115
0.126
0.137
0.157
0.176
0.195
0.212
0.230
0.245
0.260
0.273
0.287
0.305
74.2
61.0
54.9
55.1
56.9
58.5
60.0
61.0
61.8
62.4
62.9
63.4
63.4
62.8
62.7
62.7
62.8
62.7
62.2
62.0
61.7
0.840
0.644
0.416
0.299
0.236
0.200
0.179
0.165
0.155
0.143
0.132
0.110
0.103
0.110
0.114
0.109
0.103
0.115
0.141
0.160
0.169
−20.3
−41.3
−58.0
−66.3
−72.0
−76.3
−79.0
−79.9
−79.9
−79.0
−78.5
−81.6
−90.5
−97.4
−98.0
−100.1
−109.7
−122.8
−128.2
−127.8
−128.3
G_UM
(dB)
35.8
29.8
24.0
20.6
18.2
16.3
14.8
13.5
12.4
11.4
10.6
9.2
8.0
7.1
6.2
5.6
5.0
4.6
4.1
3.7
3.4
Table 14 Noise data: V_CE = −10 V; I_C = −20 mA.
f
(MHz)
F_min
(dB)
500
3.00
1 000
3.60
Γ_opt
(ratio)
(deg)
0.240
98.0
0.320
131.0
R_n
0.440
0.400
March 1994
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