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BFT93W Datasheet, PDF (14/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor | |||
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Philips Semiconductors
PNP 4 GHz wideband transistor
Product speciï¬cation
BFT93W
Table 7 Common emitter scattering parameters: VCE = â5 V; IC = â30 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.382
0.453
0.502
0.521
0.532
0.537
0.542
0.543
0.545
0.548
0.552
0.565
0.577
0.584
0.586
0.598
0.620
0.639
0.646
0.642
0.644
â62.3
â113.1
â144.8
â158.0
â165.8
â170.8
â174.9
â178.2
178.7
176.0
173.2
168.6
165.0
161.7
157.9
153.6
150.3
148.1
146.3
143.4
139.8
28.063
19.479
11.682
8.162
6.248
5.069
4.269
3.692
3.258
2.917
2.644
2.233
1.948
1.734
1.577
1.451
1.345
1.251
1.169
1.118
1.071
151.4
126.1
107.7
98.8
92.9
88.6
84.9
81.7
78.8
76.1
73.8
69.2
64.9
60.8
57.3
54.2
51.5
48.7
46.0
43.0
40.5
0.016
0.030
0.043
0.054
0.065
0.076
0.088
0.099
0.111
0.122
0.133
0.154
0.175
0.195
0.214
0.234
0.252
0.269
0.284
0.300
0.321
71.2
58.8
56.8
58.9
61.4
63.4
65.0
65.8
66.4
67.0
67.4
68.0
68.2
67.5
67.3
67.3
67.5
67.5
66.6
66.2
65.7
0.781
0.543
0.327
0.232
0.185
0.161
0.148
0.139
0.131
0.123
0.114
0.101
0.105
0.119
0.125
0.124
0.129
0.152
0.181
0.200
0.210
â27.1
â51.8
â70.7
â81.5
â89.9
â96.5
â100.5
â102.3
â103.2
â103.6
â104.8
â112.5
â121.9
â125.4
â125.0
â128.3
â137.0
â144.6
â146.1
â144.7
â145.0
GUM
(dB)
33.7
28.3
23.1
19.8
17.5
15.7
14.2
13.0
11.9
10.9
10.1
8.7
7.6
6.7
5.8
5.2
4.8
4.3
3.8
3.4
3.1
Table 8 Noise data: VCE = â5 V; IC = â30 mA.
f
(MHz)
Fmin
(dB)
500
3.40
1 000
4.20
Îopt
(ratio)
(deg)
0.308
104.2
0.380
164.0
Rn
0.830
0.310
March 1994
14
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