BFT93W Datasheet, PDF (4/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
400
P _tot
(mW)
300
MLB424
200
100
0
0
50
100
150
200
Ts ( ^o C)
Fig.2 Power derating as a function of the soldering
point temperature.
60
h _FE
40
MLB425
20
0
0
10
20
30
40
I _C (mA)
V_CE = −5 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current, typical values.
2
C _re
(pF)
1.6
MLB426
1.2
0.8
0.4
0
0
4
8
12
16
20
VCB (V)
6
fT
(GHz)
4
2
0
1
MLB427
VCE =
10 V
5V
10
10 ²
I _C (mA)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
March 1994
f = 500 MHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current, typical values.
4