BFT93W Datasheet, PDF (3/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 93 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
−15
−12
−2
−50
300
+150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point up to T_s = 93 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
190
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
I_CBO
collector cut-off current
h_FE
DC current gain
f_T
transition frequency
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
G_UM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
I_E = 0; V_CB = −5 V
I_C = −30 mA; V_CE = −5 V
I_C = −30 mA; V_CE = −5 V;
f = 500 MHz; T_amb = 25 °C
I_E = i_e = 0; V_CB = −5 V;
f = 1 MHz
I_C = i_c = 0; V_EB = −0.5 V;
f = 1 MHz
I_C = 0; V_CE = −5 V;
f = 1 MHz
I_C = −30 mA; V_CE = −5 V;
f = 500 MHz; T_amb = 25 °C
I_C = −30 mA; V_CE = −5 V;
f = 1 GHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = −10 mA;
V_CE = −5 V; f = 500 MHz
Γ_s = Γ_opt; I_C = −10 mA;
V_CE = −5 V; f = 1 GHz
MIN.
−
20
−
TYP.
−
50
4
MAX.
−50
−
−
UNIT
nA
GHz
−
1.2
−
pF
−
1.4
−
pF
−
1
−
pF
−
15.5
−
dB
−
10
−
dB
−
2.4
−
dB
−
3
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero. G_UM = 10 log --₍--1-----_–------s---₁---₁----₂^s---₎-²--¹-₍---1-²----_–------s---₂--₂-----₂---₎- dB.
March 1994
3