BFT93W Datasheet, PDF (15/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 9 Common emitter scattering parameters: V_CE = −10 V; I_C = −5 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.837
0.781
0.670
0.592
0.547
0.523
0.507
0.495
0.487
0.481
0.478
0.483
0.493
0.499
0.501
0.509
0.529
0.550
0.564
0.564
0.569
−16.8
−40.2
−73.9
−98.6
−116.1
−128.7
−138.6
−146.1
−152.5
−158.1
−163.1
−171.8
−178.2
176.9
172.0
166.5
161.8
158.8
156.7
153.7
150.0
11.098
10.061
8.331
6.727
5.490
4.616
3.971
3.476
3.094
2.782
2.532
2.155
1.895
1.694
1.541
1.418
1.317
1.228
1.148
1.100
1.051
166.4
150.4
130.4
116.7
107.3
100.5
94.9
90.3
86.3
82.6
79.5
73.7
68.4
63.6
59.6
55.9
52.6
49.0
45.9
42.8
40.2
0.020
0.046
0.073
0.088
0.098
0.106
0.114
0.121
0.129
0.136
0.143
0.156
0.171
0.185
0.198
0.212
0.224
0.236
0.246
0.259
0.274
80.4
67.6
54.7
48.3
45.8
45.2
45.6
46.4
47.3
48.2
49.3
51.0
52.4
53.2
54.4
55.5
56.5
57.2
57.5
58.2
58.9
0.947
0.856
0.674
0.537
0.447
0.389
0.352
0.327
0.309
0.294
0.279
0.250
0.234
0.232
0.233
0.227
0.215
0.215
0.232
0.253
0.262
−10.2
−23.6
−38.2
−46.3
−51.2
−54.5
−56.5
−57.6
−58.0
−57.8
−57.8
−59.2
−63.8
−69.2
−71.8
−74.1
−79.5
−88.7
−96.4
−100.1
−102.7
G_UM
(dB)
36.0
29.9
23.6
19.9
17.3
15.4
13.8
12.5
11.4
10.4
9.5
8.1
7.0
6.1
5.3
4.6
4.0
3.6
3.1
2.8
2.4
Table 10 Noise data: V_CE = −10 V; I_C = −5 mA.
f
(MHz)
F_min
(dB)
500
2.00
1 000
2.50
Γ_opt
(ratio)
(deg)
0.340
73.0
0.380
105.0
R_n
0.440
0.360
March 1994
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