BFT93W Datasheet, PDF (2/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
FEATURES
• High power gain
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
APPLICATIONS
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
handbook, 2 columns
3
SOT323 (S-mini) package. The
BFT93W uses the same crystal as the
SOT23 version, BFT93.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
2
Top view
MBC870
BFT93W Marking code: X1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
F
T_j
collector-base voltage
open emitter
collector-emitter voltage
open base
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
up to T_s = 93 °C; note 1
I_C = −30 mA; V_CE = −5 V
I_C = 0; V_CE = −5 V; f = 1 MHz
I_C = −30 mA; V_CE = −5 V;
f = 500 MHz
maximum unilateral power gain
noise figure
I_C = −30 mA; V_CE = −5 V;
f = 500 MHz; T_amb = 25 °C
I_C = −10 mA; V_CE = −5 V;
f = 500 MHz
junction temperature
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
20
−
−
−
−
−
TYP.
−
−
−
−
50
1
4
MAX.
−15
−12
−50
300
−
−
−
UNIT
V
V
mA
mW
pF
GHz
15.5
−
dB
2.4
−
dB
−
150
°C
March 1994
2