BFT93W Datasheet, PDF (13/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 5 Common emitter scattering parameters: V_CE = −5 V; I_C = −20 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.450
0.475
0.502
0.516
0.526
0.530
0.534
0.535
0.536
0.538
0.541
0.554
0.566
0.571
0.573
0.585
0.604
0.624
0.633
0.626
0.629
−49.1
−99.1
−135.9
−151.8
−161.1
−167.1
−171.9
−175.7
−179.1
177.7
174.9
169.8
166.1
162.6
158.8
154.4
151.0
148.8
147.1
144.3
140.8
25.274
18.682
11.661
8.244
6.342
5.156
4.350
3.768
3.326
2.980
2.703
2.285
1.995
1.777
1.616
1.488
1.380
1.285
1.200
1.148
1.100
154.6
130.2
110.7
101.0
94.7
90.2
86.3
83.0
80.1
77.3
74.9
70.3
65.9
61.7
58.2
55.0
52.4
49.4
46.6
43.5
41.0
0.018
0.034
0.047
0.058
0.068
0.079
0.089
0.101
0.112
0.123
0.134
0.154
0.175
0.195
0.214
0.234
0.252
0.268
0.282
0.299
0.319
72.5
59.2
54.5
55.6
58.1
60.1
61.9
63.2
64.0
64.8
65.4
66.2
66.6
66.0
66.0
66.1
66.2
66.2
65.5
65.0
64.7
0.830
0.608
0.379
0.270
0.215
0.185
0.169
0.157
0.147
0.137
0.127
0.111
0.112
0.125
0.130
0.127
0.130
0.152
0.180
0.199
0.208
−24.1
−47.9
−67.2
−77.9
−86.1
−92.5
−96.7
−98.7
−99.8
−100.5
−101.9
−109.1
−118.8
−122.9
−123.1
−126.2
−135.1
−143.0
−144.7
−143.3
−143.7
G_UM
(dB)
34.1
28.5
23.3
20.0
17.7
15.8
14.4
13.1
12.0
11.1
10.2
8.8
7.7
6.8
6.0
5.3
4.8
4.4
3.9
3.5
3.2
Table 6 Noise data: V_CE = −5 V; I_C = −20 mA.
f
(MHz)
F_min
(dB)
500
2.80
1 000
3.60
Γ_opt
(ratio)
(deg)
0.301
100.8
0.356
152.2
R_n
0.610
0.280
March 1994
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