BFT93W Datasheet, PDF (18/24 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

Philips Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 15 Common emitter scattering parameters: V_CE = −10 V; I_C = −30 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
200
300
400
500
600
700
800
900
1 000
1 200
1 400
1 600
1 800
2 000
2 200
2 400
2 600
2 800
3 000
0.617
0.529
0.464
0.449
0.446
0.446
0.448
0.449
0.450
0.452
0.456
0.472
0.488
0.498
0.502
0.516
0.539
0.562
0.575
0.573
0.576
−39.1
−82.4
−120.8
−139.7
−151.0
−158.1
−163.5
−167.8
−171.7
−175.1
−178.5
175.9
171.7
168.1
164.0
159.3
155.4
152.9
151.2
148.4
144.7
28.045
20.389
12.630
8.920
6.853
5.569
4.694
4.060
3.579
3.204
2.902
2.448
2.134
1.898
1.721
1.580
1.464
1.362
1.273
1.217
1.164
153.9
129.6
110.4
101.0
94.8
90.3
86.5
83.3
80.4
77.7
75.4
70.8
66.6
62.5
59.1
56.0
53.2
50.2
47.4
44.5
42.0
0.017
0.032
0.047
0.058
0.069
0.081
0.092
0.103
0.115
0.126
0.136
0.157
0.176
0.194
0.211
0.229
0.245
0.260
0.272
0.287
0.305
73.1
60.3
56.4
57.3
59.4
60.9
62.2
63.0
63.6
63.8
64.1
64.3
64.2
63.6
63.4
63.5
63.7
63.6
63.0
62.9
62.6
0.797
0.583
0.364
0.259
0.204
0.174
0.158
0.147
0.139
0.131
0.122
0.103
0.097
0.106
0.112
0.108
0.103
0.116
0.141
0.162
0.172
−22.6
−44.1
−59.3
−66.3
−71.2
−75.0
−77.2
−77.7
−77.1
−75.9
−75.0
−77.7
−87.1
−94.6
−95.7
−98.0
−108.1
−121.5
−127.4
−127.3
−128.1
G_UM
(dB)
35.4
29.4
23.7
20.3
17.9
16.0
14.5
13.2
12.1
11.2
10.3
8.9
7.8
6.9
6.0
5.4
4.8
4.4
3.9
3.5
3.2
Table 16 Noise data: V_CE = −10 V; I_C = −30 mA.
f
(MHz)
F_min
(dB)
500
3.60
1 000
4.20
Γ_opt
(ratio)
(deg)
0.250
101.0
0.310
143.0
R_n
0.550
0.480
March 1994
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