PIC16F636-I Datasheet, PDF (178/234 Pages) Microchip Technology – 8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635/PIC16F636/639
15.7 DC Characteristics: PIC16F639-I (Industrial) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
Supply Voltage
2.0V ≤ VDD ≤ 3.6V
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
VOH
Output High Voltage
D090
I/O ports
VDD – 0.7
—
—
V IOH = -3.0 mA, VDD = 3.6V (Ind.)
D092
OSC2/CLKOUT (RC mode)
VDD – 0.7
—
—
V IOH = -1.3 mA, VDD = 3.6V (Ind.)
IOH = -1.0 mA, VDD = 3.6V (Ext.)
Digital Output High Voltage
Analog Front-End (AFE) section
D093
LFDATA/SDIO for Analog Front-End
(AFE)
VDD – 0.5
—
—
V IOH = -400 μA, VDD = 2.0V
Capacitive Loading Specs on
Output Pins
D100 COSC2 OSC2 pin
—
—
15*
pF In XT, HS and LP modes when
external clock is used to drive OSC1
D101 CIO
All I/O pins
—
—
50*
pF
D102 IULP
Ultra Low-power Wake-up Current
—
200
—
nA
Data EEPROM Memory
D120 ED
Byte Endurance
100K
1M
—
E/W -40°C ≤ TA ≤ +85°C
D120A ED
Byte Endurance
10K
100K
—
E/W +85°C ≤ TA ≤ +125°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON1 to read/write
VMIN = Minimum operating voltage
D122 TDEW Erase/Write cycle time
—
5
6
ms
D123 TRETD Characteristic Retention
40
—
—
Year Provided no other specifications are
violated
D124 TREF Number of Total Erase/Write Cycles
1M
10M
—
E/W -40°C ≤ TA ≤ +85°C
before Refresh⁽¹⁾
Program Flash Memory
D130 EP
Cell Endurance
10K
100K
—
E/W -40°C ≤ TA ≤ +85°C
D130A ED
Cell Endurance
1K
10K
—
E/W +85°C ≤ TA ≤ +125°C
D131 VPR
VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating voltage
D132 VPEW VDD for Erase/Write
4.5
—
5.5
V
D133 TPEW Erase/Write cycle time
—
2
2.5
ms
D134 TRETD Characteristic Retention
40
—
—
Year Provided no other specifications are
violated
* These parameters are characterized but not tested.
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC
mode.
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating
conditions. Higher leakage current may be measured at different input voltages.
4: See Section 9.4.1 “Using the Data EEPROM” for additional information
DS41232D-page 176
© 2007 Microchip Technology Inc.