PIC16F636-I Datasheet, PDF (174/234 Pages) Microchip Technology – 8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635/PIC16F636/639
15.4 DC Characteristics: PIC12F635/PIC16F636-I (Industrial)
PIC12F635/PIC16F636-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ† Max Units
Conditions
VOH Output High Voltage
D090
I/O ports
VDD – 0.7
—
—
V IOH = -3.0 mA, VDD = 4.5V (Ind.)
D092
OSC2/CLKOUT (RC mode)
VDD – 0.7
—
—
V IOH = -1.3 mA, VDD = 4.5V (Ind.)
IOH = -1.0 mA, VDD = 4.5V (Ext.)
D100 IULP
Ultra Low-power Wake-up
Current
—
200
—
nA
Capacitive Loading Specs
on Output Pins
D101 COSC2 OSC2 pin
—
—
15*
pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101A CIO
All I/O pins
—
—
50*
pF
Data EEPROM Memory
D120 ED
Byte Endurance
100K
1M
—
E/W -40°C ≤ TA ≤ +85°C
D120A ED
Byte Endurance
10K
100K
—
E/W +85°C ≤ TA ≤ +125°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON1 to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write cycle time
—
5
6
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF
Number of Total Erase/Write
Cycles before Refresh⁽⁴⁾
1M
10M
—
E/W -40°C ≤ TA ≤ +85°C
Program Flash Memory
D130 EP
Cell Endurance
10K
100K
—
E/W -40°C ≤ TA ≤ +85°C
D130A ED
Cell Endurance
1K
10K
—
E/W +85°C ≤ TA ≤ +125°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VPEW VDD for Erase/Write
4.5
—
5.5
V
D133 TPEW Erase/Write cycle time
—
2
2.5
ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
*
†
Note 1:
2:
3:
4:
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an
external clock in RC mode.
Negative current is defined as current sourced by the pin.
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels
represent normal operating conditions. Higher leakage current may be measured at different input voltages.
See Section 9.4.1 “Using the Data EEPROM” for additional information.
DS41232D-page 172
© 2007 Microchip Technology Inc.