PIC16F636-I Datasheet, PDF (176/234 Pages) Microchip Technology – 8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635/PIC16F636/639
15.6 DC Characteristics: PIC16F639-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
Supply Voltage
2.0V ≤ VDD ≤ 3.6V
Param
No.
Sym
Device Characteristics
Min
Typ†
Max Units
VDD
Conditions
Note
D010
IDD
Supply Current^(1,2,3)
—
11
16
μA
2.0 FOSC = 32.768 kHz
—
18
28
μA
3.0
LP Oscillator mode
D011
—
140
240
μA
—
220
380
μA
2.0 FOSC = 1 MHz
3.0
XT Oscillator mode
D012
—
260
360
μA
—
420
650
μA
2.0 FOSC = 4 MHz
3.0
XT Oscillator mode
D013
—
130
220
μA
—
215
360
μA
2.0 FOSC = 1 MHz
3.0 ^{EC Oscillator mode}
D014
—
220
340
μA
—
375
550
μA
2.0 FOSC = 4 MHz
3.0 ^{EC Oscillator mode}
D015
—
8
20
μA
2.0 FOSC = 31 kHz
—
16
40
μA
3.0 ^{LFINTOSC mode}
D016
—
340
450
μA
—
500
700
μA
2.0 FOSC = 4 MHz
3.0 ^{HFINTOSC mode}
D017
D020
IPD
Power-down Base Current⁽⁴⁾
D021
IWDT
—
230
400
μA
—
400
680
μA
—
0.15
1.2
μA
—
0.20
1.5
μA
—
1.2
2.2
μA
2.0 FOSC = 4 MHz
3.0 ^{EXTRC mode}
2.0 WDT, BOR, Comparators,
3.0
VREF and T1OSC disabled
(excludes AFE)
2.0 WDT Current⁽¹⁾
D022A IBOR
—
2.0
4.0
μA
3.0
—
42
60
μA
3.0 BOR Current⁽¹⁾
D022B ILVD
—
22
28
μA
2.0 PLVD Current
D023
ICMP
—
25
35
μA
3.0
—
32
45
μA
2.0 Comparator Current⁽¹⁾
D024A IVREFHS
D024B IVREFLS
D025
IT1OSC
—
60
78
μA
3.0
—
30
36
μA
2.0
CVREF Current⁽¹⁾
—
45
55
μA
3.0 ^(high-range)
—
39
47
μA
2.0
CVREF Current⁽¹⁾
—
59
72
μA
3.0 ^(low-range)
—
4.5
7.0
μA
2.0 T1OSC Current⁽¹⁾
—
5.0
8.0
μA
3.0
D026
IACT
Active Current of AFE only
CS = VDD; Input = Continuous
(receiving signal)
Wave (CW);
1 LC Input Channel Signal —
10
—
μA
3.6 Amplitude = 300 mVPP.
3 LC Input Channel Signals —
13
18
μA
3.6 All channels enabled.
D027
ISTDBY Standby Current of AFE only
(not receiving signal)
1 LC Input Channel Enabled —
3
2 LC Input Channels Enabled —
4
3 LC Input Channels Enabled —
5
CS = VDD; ALERT = VDD
5
μΑ
3.6
6
μA
3.6
7
μA
3.6
D028
ISLEEP Sleep Current of AFE only
—
0.2
1
μA
3.6 CS = VDD; ALERT = VDD
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note 1: The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins
tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog Front-End not included.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate,
oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. MCU only, Analog
Front-End not included.
3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The
peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when
calculating total current consumption.
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep
mode, with all I/O pins in high-impedance state and tied to VDD.
DS41232D-page 174
© 2007 Microchip Technology Inc.