PIC16F636-I Datasheet, PDF (175/234 Pages) Microchip Technology – 8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635/PIC16F636/639
15.5 DC Characteristics: PIC16F639-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D001 VDD Supply Voltage
2.0 — 3.6 V FOSC ≤ 10 MHz
D001A VDDT Supply Voltage (AFE)
2.0 — 3.6
V Analog Front-End VDD voltage. Treated as
VDD in this document.
D002 VDR
RAM Data Retention
Voltage⁽¹⁾
1.5* — — V Device in Sleep mode
D003 VPOR VDD Start Voltage to
— VSS —
ensure internal Power-on
Reset signal
V See Section 12.3 “Power-on Reset” for
details.
D003A VPORT VDD Start Voltage (AFE) —
to ensure internal Power-
on Reset signal
— 1.8
V Analog Front-End POR voltage.
D004
SVDD
VDD Rise Rate to ensure 0.05* —
internal Power-on Reset
signal
— V/ms See Section 12.3 “Power-on Reset” for
details.
D005 VBOD Brown-out Reset
2.0 2.1 2.2 V
D006 RM
Turn-on Resistance or
Modulation Transistor
— 50 100 Ohm VDD = 3.0V
D007 RPU
Digital Input Pull-Up
Resistor
CS, SCLK
50 200 350 kOhm VDD = 3.6V
D008 IAIL
Analog Input Leakage
Current
LCX, LCY, LCZ — — ±1 μA VDD = 3.6V, VSS ≤ VIN ≤ VDD, tested at
LCCOM — — ±1 μA Sleep mode
*
†
Note 1:
These parameters are characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.
© 2007 Microchip Technology Inc.
DS41232D-page 173