PIC16F636-I Datasheet, PDF (170/234 Pages) Microchip Technology – 8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635/PIC16F636/639
15.2 DC Characteristics: PIC12F635/PIC16F636-I (Industrial) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020 IPD
D021
Power-down Base
Current⁽⁴⁾
— 0.15 1.2 μA 2.0 WDT, BOR,
— 0.20 1.5
μA
3.0 ^{Comparators, VREF}
— 0.35 1.8
μA
5.0 ^{and T1OSC disabled}
—
1.0
2.2
μA
2.0 WDT Current⁽¹⁾
— 2.0 4.0 μA 3.0
D022A
— 3.0 7.0 μA 5.0
—
58
60
μA
3.0 BOR Current⁽¹⁾
— 109 122 μA 5.0
D022B
—
22
28
μA 2.0 PLVD Current
—
25
35
μA 3.0
D023
—
33
45
μA 5.0
—
32
45
μA
2.0 Comparator Current⁽³⁾
—
60
78
μA 3.0
D024A
— 120 160 μA
—
30
36
μA
—
45
55
μA
5.0
2.0 CVREF Current⁽¹⁾
3.0 ^(high-range)
D024B
—
75
95
μA 5.0
—
39
47
μA
2.0 CVREF Current⁽¹⁾
—
59
72
μA 3.0 ^(low-range)
D025
— 98 124 μA 5.0
— 4.5 7.0 μA 2.0 T1OSC Current⁽³⁾
— 5.0 8.0 μA 3.0
— 6.0 12 μA 5.0
†
Note 1:
2:
3:
4:
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog
Front-End not included.
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have
an impact on the current consumption. MCU only, Analog Front-End not included.
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS41232D-page 168
© 2007 Microchip Technology Inc.