MAX11014_08 Datasheet, PDF (3/70 Pages) Maxim Integrated Products – Automatic RF MESFET Amplifier Drain-Current Controllers

Automatic RF MESFET Amplifier
Drain-Current Controllers
ELECTRICAL CHARACTERISTICS (continued)
(V_GATEVSS = V_AVSS = -5.5V to -4.75V, V_AVDD = +4.75V to +5.25V, V_DVDD = +2.7V to V_AVDD, external V_REFADC = +2.5V, external
V_REFDAC = +2.5V, C_REFADC = C_REFDAC = 0.1µF, V_OPSAFE1 = V_OPSAFE2 = 0, V_RCS1+ = V_RCS2+ = +5V, C_FILT1 = C_FILT3 = 1nF, C_FILT2 =
C_FILT4 = 1nF, V_AGND = V_DGND = 0, V_ADCIN0 = V_ADCIN1 = 0, V_ACLAMP1 = V_ACLAMP2 = -5V, T_J = T_MIN to T_MAX, unless otherwise noted.
All typical values are at T_J = +25°C.)
PARAMETER
SYMBOL
CLASS AB OUTPUT CHANNEL
Untrimmed Offset
Offset Temperature Coefficient
Gain
Gain Error
GATE-DRIVE AMPLIFIER/INTEGRATOR
(Note 1)
CONDITIONS
I_GATE = -1mA
Output Gate-Drive Voltage Range
(Note 2)
V_GATE
I_GATE = +1mA
I_GATE = -10mA
I_GATE = +10mA
MIN
TYP MAX UNITS
50
µV
0
mV/^oC
-2
0.1
%
V_GATEVSS
V
+1
-0.15 -4
mV
V_GATEVSS
V
+ 1.2
-1
-20
mV
Gate Voltage Settling Time—
MAX11015
t_GATE
Settles to within ±0.5% of final value, R_S
= 50 , C_GATE = 15µF, see GATE Output
Resistance vs. GATE Voltage in the
Typical Operating Characteristics
1.1
ms
Output Capacitive Load (Note 3)
Gate Voltage Noise
Maximum Power-On Transient
Output Short-Circuit Current Limit
Output Safe Switch On-
Resistance
ADC DC ACCURACY
Resolution
Differential Nonlinearity
Integral Nonlinearity
Offset Error
Gain Error
Gain Temperature Coefficient
Offset Temperature Coefficient
C_GATE
I_SC
R_OPSW
No series resistance, R_S = 0
R_S = 500
RMS noise, 1kHz to 1MHz
C_LOAD = 1nF
Sinking or sourcing
Clamp GATE1 to ACLAMP1, GATE2 to
ACLAMP2 (Note 4)
DNL_ADC
INL_ADC (Note 5)
(Note 6)
0
0.5
nF
0
15,000
250
nV/
Hz
±100
mV
±25
mA
3.6
k
12
Bits
±2
LSB
±2
LSB
±2
±4
LSB
±2
±4
LSB
±0.4
ppm/^oC
±0.4
ppm/^oC
Channel-to-Channel Offset
Matching
±0.1
LSB
Channel-to-Channel Gain
Matching
±0.1
LSB
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