81080V Datasheet, PDF (19/26 Pages) Lattice Semiconductor – 3.3V In-System Programmable SuperBIG™ High Density PLD

Specifications ispLSI 81080V
Power Consumption
Power consumption in the ispLSI 81080V device de-
pends on two primary factors: the speed at which the
device is operating and the number of product terms
used. The product terms have a fuse-selectable speed/
power tradeoff setting. Each group of four product terms
has a single speed/power tradeoff control fuse that acts
on the complete group of four. The fast “high-speed”
setting operates product terms at their normal full power
consumption. For portions of the logic that can tolerate
longer propagation delays, selecting the slower “low-
power” setting will significantly reduce the power
dissipation for these product terms. Figure 10 shows the
relationship between power and operating speed.
Figure 10. Typical Device Power Consumption vs fmax
1300
1200
1100
1000
900
800
ispLSI 81080V
700
600
500
Turbo
Non-Turbo
400
300
200
0
10 20 30 40 50 60 70 80 90 100 110 120 130
fmax (MHz)
Notes: Configuration of 54 20-bit counters
Typical current at 3.3V, 25¡ C
ICC can be estimated for the ispLSI 81080V using the following equation:
ICC = 45.0 + (# of Turbo PTs * 0.25) + (# of Non-Turbo PTs * 0.11) + (# of Macrocells Used * Fmax * AF * .043)
# of Turbo PTs = Number of Turbo Product Terms Used in Design
# of Non-Turbo PTs = Number of Non-Turbo Product Terms Used in Design
fmax = Maximum Operating Frequency
Average Macrocell Toggle Frequency
AF (Activity Factor) =
Fmax
Note: An Activity Factor of 1.0 means all macrocell registers toggle at fmax. An Activity Factor of 0.5 means the
average macrocell register toggles at half of fmax.
The ICC estimate is based on typical conditions (VCC = 3.3V, room temperature) and an assumption of two GLB loads
on average exists. These values are for estimates only. Since the value of ICC is sensitive to operating conditions
and the program in the device, the actual ICC should be verified.
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