81080V Datasheet, PDF (11/26 Pages) Lattice Semiconductor – 3.3V In-System Programmable SuperBIG™ High Density PLD

Specifications ispLSI 81080V
Absolute Maximum Ratings ^1,2
Supply Voltage V_cc .................................. -0.5 to +5.4V
Input Voltage Applied ............................... -0.5 to +5.6V
Tri-Stated Output Voltage Applied ........... -0.5 to +5.6V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T_J) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
DC Recommended Operating Condition
SYMBOL
VCC
VCCIO
Supply Voltage
I/O Supply Voltage
PARAMETER
Commercial T_A = 0°C to 70°C
MIN.
3.0
2.3
MAX. UNITS
3.6
V
3.6
V
Table 2-0005/81080V
Capacitance (T_A=25°C,f=1.0 MHz)
SYMBOL
C₁
C₂
C₃
PARAMETER
I/O Capacitance
Clock Capacitance
Global Input Capacitance
TYPICAL
10
10
10
UNITS
pf
pf
pf
TEST CONDITIONS
V_CC = 3.3V, V_I/O = 2.0V
V_CC = 3.3V, V_CK = 2.0V
V_CC = 3.3V, V_G = 2.0V
Table 2-0006/81080V
Erase/Reprogram Specification
PARAMETER
Erase/Reprogram Cycles
MINIMUM
10000
MAXIMUM
–
UNITS
Cycles
Table 2-0008/81080V
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