81080V Datasheet, PDF (12/26 Pages) Lattice Semiconductor – 3.3V In-System Programmable SuperBIG™ High Density PLD

Specifications ispLSI 81080V
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time
GND to VCCIOmin
≤ 1.5 ns 10% to 90%
Input Timing Reference Levels
1.5V
Ouput Timing Reference Levels
1.5V
Output Load
3-state levels are measured 0.5V from
steady-state active level.
See Figure 9
Table 2-0003/81080V
Output Load Conditions (See Figure 9)
Figure 9. Test Load
VCCIO
R1
Device
Output
R2
Test
Point
CL*
3.3V
2.5V
TEST CONDITION
R1 R2 R1 R2 CL
A
316Ω 348Ω 511Ω 475Ω 35pF
Active High
B
Active Low
∞ 348Ω ∞ 475Ω 35pF
316Ω ∞ 511Ω ∞ 35pF
C
Active High to Z
at V_OH -0.5V
∞ 348Ω ∞ 475Ω 5pF
Active Low to Z
at V_OL+0.5V
316Ω
∞
511Ω
∞
5pF
D Slow Slew
∞ ∞ ∞ ∞ 35pF
Table 2-0004A/81080V
*CL includes Test Fixture and Probe Capacitance.
0213A/81080V
DC Electrical Characteristics for 3.3V Range
Over Recommended Operating Conditions
SYMBOL
PARAMETER
VCCIO ^{I/O Supply Voltage}
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
CONDITION
TA = 0°C to + 70°C
I_OL = 8 mA
I_OH = -4 mA
MIN.
3.0
-0.3
2.0
–
2.4
MAX. UNITS
3.6
V
0.8
V
5.25 V
0.4
V
–
V
Table 2-0007/81080V
DC Electrical Characteristics for 2.5V Range
Over Recommended Operating Conditions
SYMBOL
PARAMETER
VCCIO ^{I/O Supply Voltage}
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
CONDITION
TA = 0°C to + 70°C
VCCIO=min, VIN=VIH or VIL, IOL= 100µA
VCCIO=min, VIN=VIH or VIL, IOL= 2mA
VCCIO=min, VIN=VIH or VIL, IOH= -100µA
VCCIO=min, VIN=VIH or VIL, IOH= -2mA
MIN.
2.3
-0.3
1.7
–
–
2.1
1.7
MAX. UNITS
2.7
V
0.7
V
5.25 V
0.2
V
0.7
V
–
V
–
V
Table 2-0007B/81080V
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