81080V Datasheet, PDF (13/26 Pages) Lattice Semiconductor – 3.3V In-System Programmable SuperBIG™ High Density PLD

Specifications ispLSI 81080V
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
CONDITION
IIL
Input or I/O Low Leakage Current
0V ≤ V_IN≤ V_IL(Max.)
IIH
Input or I/O High Leakage Current
(VCCIO-0.2)V ≤ VIN ≤ VCCIO
IPU ⁴
IBHL
IBHH
IBHLO
IBHLH
IBHT
I/O Active Pullup Current
Bus Hold Low Sustaining Current
Bus Hold High Sustaining Current
Bus Hold Low Overdrive Current
Bus Hold High Overdrive Current
Bus Hold Trip Points
VCCIO ≤ VIN ≤ 5.25V
0V ≤ VIN ≤ VIL
VIN = VIL(max)
VIN = VIH(min)
0V ≤ VIN ≤ VCCIO
0V ≤ VIN ≤ VCCIO
ICC^{1,3,5 Operating Power Supply Current}
V_IL= 0.5V, V_IH= 3.0V High Speed Mode
f_TOGGLE = 1 MHz
Low Power Mode
1. Measured at a frequency of 1MHz using 54 20-bit counters.
2. Typical values are at V_CC = 3.3V and T_A = 25°C.
3. Maximum I_CC varies widely with specific device configuration and operating frequency.
4. Pullup is capable of pulling minimum voltage of V_OH under no-load conditions.
5. Unused inputs held at GND.
MIN.
–
–
–
–
40
-40
–
–
V_IL
–
–
TYP.²
–
–
–
–
–
–
–
–
–
590
250
MAX. UNITS
-10 µA
10
µA
50
µA
-250 µA
–
µA
–
µA
550 µA
-550 µA
VIH
V
–
mA
–
Table 2-0007C/81080V
13