PALLV22V10 Datasheet, PDF (17/19 Pages) Lattice Semiconductor – Low-Voltage Zero Power 24-Pin EE CMOS Versatile PAL Device

TYPICAL THERMAL CHARACTERISTICS
PALLV22V10-10
Measured at 25°C ambient. These parameters are not tested.
Parameter
Symbol
Parameter Description
Typ
SKINNY DIP
PLCC
Unit
θjc
Thermal impedance, junction to case
26
20
°C/W
θja
Thermal impedance, junction to ambient
86
69
°C/W
200 lfpm air
72
57
°C/W
θjma
Thermal impedance, junction to ambient with air flow
Plastic θjc Considerations
400 lfpm air
600 lfpm air
800 lfpm air
65
60
FOR⁵⁵
52
47
45
°C/W
°C/W
°C/W
The data listed for plastic θjc are for reference only and are not recommended for use in calculating junction temperatures. The
heat-flow paths in plastic-encapsulated devices are complex, making the θjc measurement relative to a specific location on the pack-
S _{age surface. Tests indicate this measurement reference point is directly below the die-attach area on the bottom center of the package.}
E Furthermore, θjc tests on packages are performed in a constant-temperature bath, keeping the package surface at a constant tem-
USE ^{GANLEDWEDVEICSIGNS perature. Therefore, the measurements can only be used in a similar environment.}
PALLV22V10 and PALLV22V10Z Families
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