English
Language : 

PALLV22V10 Datasheet, PDF (14/19 Pages) Lattice Semiconductor – Low-Voltage Zero Power 24-Pin EE CMOS Versatile PAL Device
TYPICAL ICC CHARACTERISTICS
VCC = 3.3 V, TA = 25°C
150
140
130
120
110
100
90
80
ICC (mA)
70
60
50
40
30
20
FOR
USE GANLEDWEDVEICSEIGSNS
PALLV22V10-7
PALLV22V10-10/15
10
0
0
5
10
15
20
25
30
35
40
45
50
Frequency (MHz)
ICC vs. Frequency
18956D-015
The selected “typical” pattern utilized 50% of the device resources. Half of the macrocells were programmed as registered, and
the other half were programmed as combinatorial. Half of the available product terms were used for each macrocell. On any
vector, half of the outputs were switching.
By utilizing 50% of the device, a midpoint is defined for ICC. From this midpoint, a designer may scale the ICC graphs up or down
to estimate the ICC requirements for a particular design.
14
PALLV22V10 and PALLV22V10Z Families