HYB18L128160BF Datasheet, PDF (8/53 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Overview
Table 3
Type¹⁾
Ordering Information
Package
Description
Commercial Temperature Range
HYB18L128160BC-7.5 P-VFBGA-54-2
HYB18L128160BF-7.5 P-VFBGA-54-2
133 MHz 4 Banks × 2 Mbit × 16 LP-SDRAM
133 MHz 4 Banks × 2 Mbit × 16 LP-SDRAM
Extended Temperature Range
HYE18L128160BC-7.5 P-VFBGA-54-2
HYE18L128160BF-7.5 P-VFBGA-54-2
133 MHz 4 Banks × 2 Mbit × 16 LP-SDRAM
133 MHz 4 Banks × 2 Mbit × 16 LP-SDRAM
1) HYB / HYE: Designator for memory products (HYB: standard temp. range; HYE: extended temp. range)
18L: 1.8V Mobile-RAM
128: 128 MBit density
160: 16 bit interface width
B: die revision
C / F: lead-containing product (C) / green product (F)
-7.5: speed grade(s): min. clock cycle time
1.2
Pin Configuration
Figure 1
1
2
3
7
8
9
V_{SS DQ15} V_SSQ
A V_DDQ DQ0
V_DD
DQ14 DQ13 V_DDQ
B
V
SSQ
DQ2
DQ1
DQ12 DQ11 ^V_SSQ C ^V_DDQ DQ4 DQ3
DQ10 DQ9 ^V_DDQ D ^V_SSQ DQ6 DQ5
DQ8 NC
V_SS E V_{DD LDQM DQ7}
UDQM CLK CKE F CAS RAS WE
NC (*) A11 A9 G BA0 BA1 CS
A8
A7
A6 H A0
A1 A10/AP
V_SS
A5
A4 J A3
A2
V_DD
(*) = no function; -0.3V .. V_DDQ + 0.3V
Standard Ballout 128-Mbit Mobile-RAM
Data Sheet
8
V1.4, 2004-04-30