HYB18L128160BF Datasheet, PDF (42/53 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Table 13 Timing Parameters for AUTO REFRESH and SELF REFRESH
Parameter
Symbol
- 7.5
Units
min.
max.
ACTIVE to ACTIVE command period
PRECHARGE command period
Refresh period (4096 rows)
Self refresh exit time
t_RC
67
t_RP
19
t_REF
–
t_SREX
1
–
ns
–
ns
64
ms
–
t_CK
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
Notes
1)
1)
1)
1)
2.4.10 POWER DOWN
CLK
CKE
CS
RAS
CAS
WE
A0-A11
BA0,BA1
= Don't Care
Figure 45 Power Down Entry Command
Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down occurs
when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a
row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input
and output buffers, excluding CLK and CKE. CKE LOW must be maintained during power-down.
Power-down duration is limited by the refresh requirements of the device (t_REF).
The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or DESELECT
command). One clock delay is required for power down entry and exit.
Data Sheet
42
V1.4, 2004-04-30