HYB18L128160BF Datasheet, PDF (51/53 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Electrical Characteristics
Table 22 Self Refresh Currents¹⁾²⁾
Parameter & Test Conditions
Max.
Temperature
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
Symbol
I_DD6
Values
typ.
max.
365
415
260
–
185
–
165
–
285
325
210
–
155
–
140
–
245
280
190
–
145
–
130
–
Units Notes
µA
–
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); V_DD = V_DDQ = 1.8 V ± 0.15 V
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
temperature with a much finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for
TCSR. At production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained
from device characterization.
3.4
Pullup and Pulldown Characteristics
Table 23 Half Drive Strength (Default) and Full Drive Strength
Voltage
(V)
Half Drive Strength (Default)
Full Drive Strength
Pull-Down Current (mA) Pull-Up Current (mA) Pull-Down Current (mA) Pull-Up Current (mA)
Nominal Nominal Nominal Nominal Nominal Nominal Nominal Nominal
Low
High
Low
High
Low
High
Low
High
0.00
0.0
0.0
-19.7
-33.4
0.0
0.0
-39.3
-66.7
0.40
15.1
20.5
-18.8
-32.0
30.2
41.0
-37.6
-63.9
0.65
20.3
28.5
-18.2
-31.0
40.5
57.0
-36.4
-61.9
0.85
22.0
32.0
-17.6
-29.9
43.9
64.0
-35.1
-59.8
1.00
22.6
33.5
-16.7
-28.7
45.2
67.0
-33.3
-57.3
1.40
23.5
35.0
-9.4
-20.4
46.9
70.0
-18.8
-40.7
1.50
23.6
35.3
-6.6
-17.1
47.2
70.5
-13.2
-34.1
1.65
23.8
35.5
-1.8
-11.4
47.5
71.0
-3.5
-22.7
1.80
23.9
35.7
3.8
-4.8
47.7
71.4
7.5
-9.6
1.95
24.0
35.9
9.8
2.5
48.0
71.8
19.6
5.0
The above characteristics are specified under nominal process variation / condition
Temperature (T_j): Nominal = 50 °C, V_DDQ: Nominal = 1.80 V
Data Sheet
47
V1.4, 2004-04-30