HYB18L128160BF Datasheet, PDF (33/53 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
2.4.6.1 WRITE Burst Termination
Data from any WRITE burst may be truncated using the BURST TERMINATE command (see Page 33), provided
that Auto Precharge was not activated. The input data provided coincident with the BURST TERMINATE
command will be ignored. This is shown in Figure 30. The BURST TERMINATE command may be used to
terminate a full-page WRITE which does not self-terminate.
CLK
Command NOP
WRITE
NOP
NOP
BST
Address
Ba A,
Col n
DQ
DI n
DI n+1
DI n+2
NOP
NOP
Ba A, Col n = Bank A, Column n
= Don't Care
DI n = Data In to column n
Burst Length = 4 in the case shown.
2 subsequent elements of Data In are written in the programmed order following DI n.
The burst is terminated after the 3rd data element.
Figure 30 Terminating a WRITE Burst
2.4.6.2 Clock Suspend Mode for WRITE Cycles
Clock suspend mode allows to extend any WRITE burst in progress by a variable number of clock cycles. As long
as CKE is registered LOW, the following internal clock pulse(s) will be ignored and no data will be captured, as
shown in Figure 31.
CLK
CKE
internal
clock
Command NOP
Address
DQ
WRITE
Ba A,
Col n
t_CSL
DI n
NOP
t_CSL
t_CSL
DI n+1
Ba A, Col n etc. = Bank A, Column n etc.
DO n etc. = Data Out from column n etc.
CL = 2 in the case shown
Clock suspend latency t_CSL is 1 clock cycle
Figure 31 Clock Suspend Mode for WRITE Bursts
NOP
NOP
DI n+2
= Don't Care
Data Sheet
33
V1.4, 2004-04-30