HYB18L128160BF Datasheet, PDF (40/53 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
2.4.9 AUTO REFRESH and SELF REFRESH
The Mobile-RAM requires a refresh of all rows in a rolling interval. Each refresh is generated in one of two ways:
by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode.
2.4.9.1 AUTO REFRESH
CLK
CKE
CS
RAS
CAS
WE
A0-A11
BA0,BA1
(High)
= Don't Care
Figure 41 AUTO REFRESH Command
Auto Refresh is used during normal operation of the Mobile-RAM. The command is nonpersistent, so it must be
issued each time a refresh is required. A minimum row cycle time (t_RC) is required between two AUTO REFRESH
commands. The same rule applies to any access command after the Auto Refresh operation. All banks must be
precharged prior to the AUTO REFRESH command.
The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care”
during an AUTO REFRESH command. The Mobile-RAM requires Auto Refresh cycles at an average periodic
interval of 15.6 µs (max.). Partial Array mode has no influence on Auto Refresh mode.
CLK
Command PRE
Address
t_RP
NOP
A10 (AP)
DQ
Pre All
High-Z
ARF
t_RC
NOP
NOP
ARF
t_RC
NOP
NOP
ACT
Ba A,
Row n
Row n
Ba A, Row n = bank A, row n
Figure 42 Auto Refresh
= Don't Care
Data Sheet
40
V1.4, 2004-04-30