HYB18L128160BF Datasheet, PDF (46/53 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
9) Concurrent Auto Precharge: bank n will start precharging when its burst has been interrupted by a READ or WRITE
command to bank m.
Table 16 Truth Table - CKE
CKEn-1 CKEn Current State
L
L
Power Down
Self Refresh
Clock Suspend
Deep Power Down
L
H
Power Down
Self Refresh
Clock Suspend
Deep Power Down
H
L
All Banks Idle
Bank(s) Active
All Banks Idle
Read / Write burst
H
H
Command
Action
Notes
X
Maintain Power Down ^1)2)3)4)
X
Maintain Self Refresh
1) to 4)
X
Maintain Clock Suspend ^{1) to 4)}
X
Maintain Deep Power
1) to 4)
Down
DESELECT or NOP
Exit Power Down
1) to 4)
DESELECT or NOP
Exit Self Refresh
1) to 5)
X
Exit Clock Suspend
1) to 4)
X
Exit Deep Power Down ^{1) to 4), 6)}
DESELECT or NOP
Enter Precharge Power ^{1) to 4)}
Down
DESELECT or NOP
Enter Active Power Down ^{1) to 4)}
AUTO REFRESH
Enter Self Refresh
1) to 4)
(valid)
Enter Clock Suspend
1) to 4)
see Table 14 and Table 15
1) to 4)
1) CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2) Current state is the state immediately prior to clock edge n.
3) COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
4) All states and sequences not shown are illegal or reserved.
5) DESELECT or NOP commands should be issued on any clock edges occurring during t_RC period.
6) Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
Data Sheet
46
V1.4, 2004-04-30