BFR840L3RHESD Datasheet, PDF (8/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

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Features
BFR840L3RHESD
Features
• Robust ultra low noise amplifier based on Infineon´s reliable
high volume SiGe:C bipolar technology
• Unique combination of high end RF performance and robustness:
20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
• Very high transition frequency f_T = 75 GHz enables best in
class noise performance at high frequencies:
NF_min = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA
• High gain |S₂₁|² = 19 dB at 5.5 GHz, 1.8 V, 10 mA
• Ideal for low voltage applications e.g. V_CC = 1.2 V and 1.8 V
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Pb free (RoHS compliant) and halogen free very small thin
leadless package (package height 0.31 mm, ideal for modules)
• Qualification report according to AEC-Q101 available
TSLP-3-9
Applications
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
• Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass)
and C-band LNB (1st and 2nd stage LNA)
• Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
• Ka-band oscillators (DROs)
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFR840L3RHESD
Package
TSLP-3-9
1=B
Pin Configuration
2=C
3=E
Marking
T8
Data Sheet
8
Revision 1.2, 2013-04-09