BFR840L3RHESD Datasheet, PDF (24/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFR840L3RHESD
Electrical Characteristics
0.5
0.4
0.3
0.2
0.1
1
1.5
2
0.07 to 12 GHz
3
4
5
10
0
0.1 0.2 0.3 0.4 0.5
12.0
1 1.5
−0.1
−0.2
−0.3
−0.4
10.0
8.0
6.0
4.0
−0.5
−1
2 3 45
−10
1.0 _−5
1.0
1.0
−4
2.0
−3
3.0
−2
−1.5
5.0mA
10mA
15mA
Figure 5-17 Output Reflection Coefficient S₂₂ = f (f), V_CE = 1.8 V, I_C = 5 / 10 / 15 mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I_C = 15mA
I_C = 10mA
0.4
I = 5.0mA
C
0.2
0
0
2
4
6
8
10
12
f [GHz]
Figure 5-18 Noise Figure NF_min = f (f), V_CE = 1.8 V, I_C = 5 / 10 / 15 mA, Z_S = Z_opt
Data Sheet
24
Revision 1.2, 2013-04-09