BFR840L3RHESD Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFR840L3RHESD
Electrical Characteristics
30 _{−3−2 −1 0}
25 ¹ _{2 3}
4
6
20 ⁵
7 ₉₈
111012
15 ¹³
14
15
10
12 ₃
4
56
78
9
111101131425 ₁₆
56
78
1111109113425 ₁₆
17
18
18
17
11111091134852
17
18
19
18
5
15
16
1
1.2
17
1.4
1.6
V_CE [V]
18
1.8
2
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (I_C, V_CE), Z_S = Z_L= 50 Ω, f = 5.5 GHz
30
25
−−65
20 ^{−−−432}
−1
0
12
15
3
−2 0
12
3
4
−1
1
0
12
3
45
45
6
7
6
7
10 ₃
2
1
5
1
4
3
2
1
1.2
1.4
6
5
4
3
2
1
0 −1
1.6
1.8
6
5
4
3
2
0
2
V_CE [V]
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L= 50 Ω, f = 5.5 GHz
Data Sheet
20
Revision 1.2, 2013-04-09