BFR840L3RHESD Datasheet, PDF (26/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFR840L3RHESD
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Simulation Data
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFR840L3RHESD SPICE GP model in the internet in MWO- and ADS-format, which you can import
into these circuit simulation tools very quickly and conveniently. The model already contains the package
parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond
to the pin configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The
BFR840L3RHESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are
given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as
well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and
intermodulation have been extracted.
Data Sheet
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Revision 1.2, 2013-04-09