BFR840L3RHESD Datasheet, PDF (21/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFR840L3RHESD
Electrical Characteristics
0.065
0.06
0.055
0.05
0.045
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V_CB [V]
Figure 5-11 Collector Base Capacitance C_CB = f (V_CB), f= 1 MHz
40
36
32
28
G_ms
24
20
16
12
|S₂₁|²
8
4
0
0
2
4
6
8
f [GHz]
Figure 5-12 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 1.8 V, I_C = 10 mA
G_ma
10
12
Data Sheet
21
Revision 1.2, 2013-04-09