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BFR840L3RHESD Datasheet, PDF (18/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor
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BFR840L3RHESD
Electrical Characteristics
10−6
10−7
10−8
10−9
10−10
10−11
0.3
0.4
0.5
0.6
0.7
V [V]
EB
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V
Data Sheet
18
Revision 1.2, 2013-04-09
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