BFR840L3RHESD Datasheet, PDF (15/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFR840L3RHESD
Electrical Characteristics
Table 5-10 AC Characteristics, V_CE = 1.8 V, f = 10 GHz
Parameter
Symbol
Min.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ma
–
|S₂₁|²
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP3 –
Values
Typ. Max.
16
–
13
–
0.9
–
11.5 –
3
–
17
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 10 mA
I_C = 10 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 10 mA
I_C = 10 mA
Table 5-11 AC Characteristics, V_CE = 1.8 V, f = 12 GHz
Parameter
Symbol
Min.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ma
–
|S₂₁|²
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP3 –
Values
Typ. Max.
13.5 –
10
–
1.1
–
12
–
3
–
17
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 10 mA
I_C = 10 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 10 mA
I_C = 10 mA
Note:
1. OIP3 value depends on the termination of all intermodulation frequency components. The termination used for
this measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
15
Revision 1.2, 2013-04-09